• 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 05
    Established Media-Brite Joint Laboratory
  • 09
    Founded Hefei Brite technology Corporation
  • 04
    Launched “YOU” brand IP portfolio
  • Dec.
    Selected by EE Times as “Silicon 60: 2015's Startups to Watch” for the third time
  • Jun.
    Brite Semiconductor, CEVA and SMIC collaborate on IoT ASIC platform
  • Apr.
    NCAP China and Brite Semiconductor R&D Partnership for Complex System Packaging Solutions
  • Launched DDR4, LPDDR4 IP based on SMIC 40nm and 28nm process
  • Jul.
    Selected by EE Times as "Hot Silicon 60 Startups" Again
  • Mar.
    CEVA, SMIC and Brite Semiconductor Partner to Provide Hard Macro Versions of CEVA DSP Cores and Platforms
  • Successful 28nm project tape out
  • Nov.
    Acquired NDS( Suzhou) Corporation
  • Apr.
    Brite’s USB 2.0 OTG PHY Implementation Using SMIC 0.11um Process Receives USB-IF Certification
  • Mar.
    Brite Semiconductor Appoints SMIC TY Chiu as Chairman
  • Oct.
    Selected by EE Times as "Hot Silicon 60 Startups"
  • Sep.
    Offer Hi-Speed USB 2.0 OTG PHY for SMIC 0.11µm & 0.13µm Processes
  • Jul.
    Cadence DDR Soft DLL PHY IP Adopted
  • Apr.
    Launch new SoC platform "Briliante"
  • Mar.
    U.S. office established
  • Feb.
    40LL Test Chip Tape out based on a Dual-Core ARM Cortex-A9 Processor
  • Jan.
    U.S. office established
  • Sep.
    Taiwan office established
  • Jun.
    Successful SMIC 40nm project mass production
  • 03
    Brite and HiSilicon announced first time silicon success of the next generation 65nm wireless network SOC
  • 06
    Successful 40nm test chip tape out
  • 12
    SMIC invested in Brite, forming strategic alliance
  • 09
    Successful 65nm project tape out
  • First Tapeout, 90nm LP process
    11
    First Tapeout, 90nm LP process
  • Registered in Zhangjiang High Tech Park, Shanghai
    06
    Registered in Zhangjiang High Tech Park, Shanghai