• 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • Brite Semiconductor (Shanghai) Co., Ltd.
  • Dr. John Zhuang was selected as the Outstanding Figure of China’s IC industry in 2020 China IC Design Achievement Award the year at the China IC Design Achievement Award in 2020 Chinese IC Industry
  • Provide DDR4, LPDDR3/4 IP based on SMIC 14nm process
  • Subsidiary BriteSemi(Suzhou)
  • Release Gen2 DDR LP PHY IP
  • Release USB 3.0 IP and PCIe 2.0/3.0 Solution
  • The 1st successful industrial project tape out
  • Sep.
    Sep.
    Founded Hefei Brite technology Corporation
  • Apr.
    Apr.
    Launched “YOU” brand IP portfolio
  • Dec.
    Dec.
    Selected by EE Times as "Silicon 60: 2015's Startups to Watch" for the 3rd time
  • Launched DDR4, LPDDR4 IP based on SMIC 40nm and 28nm process
  • Jul.
    Jul.
    Selected by EE Times as "Hot Silicon 60 Startups" Again
  • Successful 28nm project tape out
  • Nov.
    Nov.
    Acquired NDS( Suzhou) Corporation
  • Apr. Apr.
    Apr.
    Brite’s USB 2.0 OTG PHY Implementation Using SMIC 0.11um Process Receives USB-IF Certification
  • Oct.
    Oct.
    Selected by EE Times as "Hot Silicon 60 Startups"
  • Sep.
    Sep.
    Offering Hi-Speed USB 2.0 OTG PHY for SMIC 0.11µm & 0.13µm Processes
  • Jan.
    Jan.
    U.S. office established
  • Sep.
    Sep.
    Taiwan office established
  • Jun.
    Jun.
    Successful SMIC 40nm project mass production
  • Dec.
    Dec.
    SMIC invested in Brite, forming strategic alliance
  • Jun.
    Jun.
    Successful 40nm test chip tape out
  • Sep.
    Sep.
    Successful 65nm project tape out
  • Nov.
    Nov.
    First Tapeout, 90nm LP process
  • Jun.
    Jun.
    Registered in Zhangjiang High Tech Park, Shanghai